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Robust molybdenum diselenide ambipolar transistors with fluoropolymer interfacial layer and their application to complementary inverter circuits - ScienceDirect
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CMOS inverter based on n-type MoS 2 and p-type WSe 2 FETs. a Schematic... | Download Scientific Diagram
High-Performance MoS2 Complementary Inverter Prepared by Oxygen Plasma Doping | ACS Applied Electronic Materials
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Electrical properties of the TMD inverter. (a) Voltage transfer... | Download Scientific Diagram
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Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits | ACS Applied Materials & Interfaces
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Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors | ACS Nano
Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides | npj 2D Materials and Applications
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Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges - Chemical Society Reviews (RSC Publishing) DOI:10.1039/C5CS00507H
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